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US 12,113,041 B2Granted
Semiconductor device with sense terminal
AssigneeRenesas Electronics Corporation
InventorsNoriko Okunishi, Toshiyuki Hata
Life of this patent
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Abstract
In order to reduce on-resistance in a semiconductor device to be used for high current applications, the semiconductor device includes a source terminal lead located between a gate terminal lead and a Kelvin terminal lead in plan view and electrically connected with a source terminal via a plurality of wires.
Claims20
A semiconductor device comprising:
- a die pad;
- a semiconductor chip mounted on the die pad;
- a plurality of leads arranged along a first side of the semiconductor chip in plan view;
- and
- a plurality of connecting members electrically connecting the semiconductor chip with the plurality of leads,
- wherein the semiconductor chip includes:
- a gate terminal;
- a sense terminal;
- and
- a force terminal including a portion located between the gate terminal and the sense terminal, and
- wherein the plurality of leads includes:
- a gate terminal lead electrically connected with the gate terminal via a gate terminal connecting member of the plurality of connecting members;
- a sense terminal lead electrically connected with the sense terminal via a sense terminal connecting member of the plurality of connecting members;
- and
- a force terminal lead located between the gate terminal lead and the sense terminal lead in plan view and electrically connected with the force terminal via a force terminal connecting member of the plurality of connecting members.
12 more elements
A semiconductor device comprising:
- a die pad;
- a semiconductor chip mounted on the die pad;
- a plurality of leads arranged along a first side of the semiconductor chip in plan view;
- and
- a plurality of connecting members electrically connecting the semiconductor chip with the plurality of leads,
- wherein the semiconductor chip includes:
- a gate terminal;
- a multi-function terminal that can be used for multiple functions;
- and
- a force terminal including a portion located between the gate terminal and the multi-function terminal,
- wherein the plurality of leads includes:
- a gate terminal lead electrically connected with the gate terminal via a gate terminal connecting member of the plurality of connecting members;
- a multi-function terminal lead electrically connected with the multi-function terminal via a multi-function terminal connecting member of the plurality of connecting members;
- and
- a force terminal lead located between the gate terminal lead and the multi-function terminal lead in plan view and electrically connected with the force terminal via a force terminal connecting member of the plurality of connecting members,
- wherein when a power MOSFET is formed in the semiconductor chip, the multi-function terminal is a Kelvin terminal, and
- wherein when a bidirectional thyristor is formed in the semiconductor chip, the multi-function terminal is the force terminal, and the multi-function terminal lead is another lead having a same function as the force terminal lead.
14 more elements
Dependencies are inferred from the claim text.