Thermal compression flip chip bump for high performance and fine pitch

A flip chip connection comprising:

• a substrate formed from silicon (Si);
• a metal pad in direct contact with a contact side of the substrate;
• first passivation means in direct contact with the contact side of the substrate, wherein the first passivation means at least partially overlaps the metal pad;
• a first metal layer on a contact side of the metal pad;
• a metallization structure on a contact side of first metal layer, the metallization structure comprising a redistribution layer (RDL);
• and
• a contact structure on a contact side of the metallization structure, the contact structure comprising a copper pillar and a solder portion,
• wherein widths of the copper pillar and the solder portion are equal.

A method for manufacturing a flip chip connection, the method comprising:

• providing a substrate formed from silicon (Si);
• forming a metal pad in direct contact with a contact side of the substrate;
• forming a first passivation layer in direct contact with the contact side of the substrate, wherein the first passivation layer at least partially overlaps the metal pad;
• forming a first metal layer on a contact side of the metal pad;
• forming a metallization structure on a contact side of the first metal layer, the metallization structure comprising a redistribution layer (RDL);
• and
• forming a contact structure on a contact side of the metallization structure, the contact structure comprising a copper pillar and a solder portion,
• wherein widths of the copper pillar and the solder portion are equal.

A non-transitory computer-readable medium comprising instructions that when executed by a processor cause the processor to perform a method, the method comprising:

• providing a substrate formed from silicon (Si);
• forming a metal pad in direct contact with a contact side of the substrate;
• forming a first passivation layer in direct contact with the contact side of the substrate, wherein the first passivation layer at least partially overlaps the metal pad;
• forming a first metal layer on a contact side of the metal pad;
• forming a metallization structure on a contact side of the first metal layer, the metallization structure comprising a redistribution layer (RDL);
• and
• forming a contact structure on a contact side of the metallization structure, the contact structure comprising a copper pillar and a solder portion,
• wherein widths of the copper pillar and the solder portion are equal.