Semiconductor package and manufacturing method thereof

A semiconductor package, comprising a first die and a second die, wherein the first die comprises:

• a first inductor pattern shaped as an open loop;
• a second inductor pattern shaped as an open loop, connected to one end of the first inductor pattern;
• a protective layer, disposed between the first inductor pattern and the second inductor pattern;
• a first bonding dielectric layer, extending on and directly in contact with the second inductor pattern and the protective layer;
• and
• first bonding pads, entrenched in the first bonding dielectric layer and levelled with a front surface of the first bonding dielectric layer;
• wherein the second die comprises:
• a third inductor pattern, shaped as an open loop;
• a second bonding dielectric layer, extending on the third inductor pattern;
• and
• second bonding pads, entrenched in the second bonding dielectric layer and levelled with a front surface of the second bonding dielectric layer;
• wherein the front surface of the first bonding dielectric layer directly contacts the front surface of the second bonding dielectric layer, the first bonding pads directly contact the second bonding pads, and the first bonding pads and the second bonding pads connect the second inductor pattern to the third inductor pattern to form a spiraling conductive wire of an inductor comprising the first inductor pattern, the second inductor pattern, and the third inductor pattern.

A manufacturing method of a semiconductor package, comprising:

• forming a first interconnection structure overlying a first semiconductor substrate and comprising a first coil of an inductor, wherein the first coil of the inductor is formed of a first conductive material;
• forming a second coil of the inductor over the first coil, the second coil being electrically connected to the first coil, wherein the second coil of the inductor is formed of a second conductive material having different composition from the first conductive material;
• disposing a bonding dielectric material to embed the second coil;
• patterning the bonding dielectric material to form a first bonding dielectric layer, and at least one trench opening and at least one via opening in the first bonding dielectric layer;
• filling a third conductive material in the at least one trench opening and the at least one via opening to form a first inductor bonding via and a first inductor bonding pad in the first bonding dielectric layer;
• and
• bonding the first inductor bonding pad and the first bonding dielectric layer to a second inductor bonding pad and a second bonding dielectric layer, wherein after bonding, the second coil is connected to a third coil of the inductor through the first inductor bonding pad and the second inductor bonding pad.