Vertical conductive structure surrounded by guard ring and method of making
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorChien-Hsuan Liu
Life of this patent
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Abstract
A semiconductor arrangement is provided. The semiconductor arrangement includes a first portion and a vertically conductive structure. The first portion includes a first dielectric layer and a first guard ring in the first dielectric layer. The first guard ring includes, in the first dielectric layer, a first metal layer coupled to a first via. The first portion includes a vertical conductive structure passing through the first dielectric layer and proximate by the first guard ring.
Claims20
A semiconductor arrangement, comprising:
- a first dielectric layer;
- a first guard ring in the first dielectric layer;
- a vertical conductive structure passing through the first dielectric layer, wherein the vertical conductive structure is surrounded by the first guard ring on at least four sides;
- and
- a conductive structure underlying the first guard ring and in contact with the vertical conductive structure.
A semiconductor arrangement, comprising:
- a first dielectric layer;
- a first guard ring in the first dielectric layer;
- a second guard ring in the first dielectric layer and around the first guard ring;
- and
- a vertical conductive structure passing through the first dielectric layer, wherein the first guard ring is between the vertical conductive structure and the second guard ring such that no line extending from the second guard ring intersects the vertical conductive structure without passing through the first guard ring.
A method for forming a semiconductor arrangement, comprising:
- forming a first guard ring in a first dielectric layer;
- removing a portion of the first dielectric layer between a first surface of the first guard ring and a second surface of the first guard ring after forming the first guard ring to define an opening;
- and
- forming a vertical conductive structure in the opening such that the first surface of the first guard ring is spaced apart in a lateral direction from the second surface of the first guard ring by the vertical conductive structure.
Dependencies are inferred from the claim text.