Semiconductor device and method of making the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsCheng-Chieh Hsieh, Hau Tao, Yung-Tien Kuo
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Abstract
A semiconductor device includes an interposer disposed on a substrate. A first major surface of the interposer faces the substrate. A system on a chip is disposed on a second major surface of the interposer. The second major surface of the interposer opposes the first major surface of the interposer. A plurality of first passive devices is disposed in the first major surface of the interposer. A plurality of second passive devices is disposed on the second major surface of the interposer. The second passive devices are different devices than the first passive devices.
Claims20
A semiconductor device, comprising:
- a capacitor disposed in a first dielectric layer over an interposer substrate,
- wherein the capacitor comprises a bottom electrode connected to a first contact of a wiring layer, a top electrode connected to a second contact of the wiring layer, and a second dielectric layer disposed between the bottom electrode and the top electrode,
- wherein the first dielectric layer covers a top surface of the capacitor;
- a via extending through the first dielectric layer electrically connected to a third contact of the wiring layer;
- and
- a chip disposed over and electrically connected to the wiring layer.
A semiconductor device, comprising:
- an interposer made of a semiconductor material having a first major surface and a second major surface opposing the first major surface;
- a plurality of deep trench capacitors in the second major surface of the interposer;
- a plurality of passive devices formed in an inductor layer between the first major surface of the interposer and a substrate;
- and
- a plurality of semiconductor chips disposed on the second major surface of the interposer and electrically connected to the interposer,
- wherein the interposer is disposed on the substrate and is electrically connected to the substrate, and
- the inductor layer is made of a different material than the interposer.
A semiconductor device, comprising:
- an interposer having a first major surface and a second major surface opposing the first major surface;
- a plurality of passive devices in the second major surface of the interposer;
- a plurality of magnetic core inductors formed in an inductor layer between the first major surface of the interposer and a substrate;
- and
- a plurality of semiconductor chips disposed over the second major surface of the interposer and electrically connected to the interposer,
- wherein the interposer is disposed on the substrate and is electrically connected to the substrate, and
- the inductor layer is made of a different material than the interposer.
Dependencies are inferred from the claim text.