Back to results
US 12,113,029 B2Granted
Semiconductor device and manufacturing method thereof
AssigneeMitsubishi Electric Corporation
InventorTatsuto Nishihara
Life of this patent
Estimating the term…
Abstract
A first molded resin containing first insulating fillers having particle sizes smaller than the opening size of a wire mesh is formed inside the wire mesh to seal a semiconductor chip, bonding wires, and bond pads, and a second molded resin containing second insulating fillers having particle sizes larger than the opening size of the wire mesh is formed outside the wire mesh to seal the semiconductor ship, the bonding wires, and the bond pads via the first molded resin and the wire mesh. This allows for reducing warpage during solder mounting and for improving productivity.
Claims6
A semiconductor device comprising:
- a semiconductor chip bonded to a surface of a substrate;
- bonding wires connecting the semiconductor chip to bond pads formed on the surface of the substrate;
- a grounded pad formed so as to surround the semiconductor chip and the bond pads;
- a basket-shaped wire mesh covering the semiconductor chip, the bonding wires, and the bond pads and joined to the grounded pad;
- a first molded resin containing first fillers having particle sizes smaller than an opening size of the wire mesh and sealing, inside of the wire mesh, the semiconductor chip, the bonding wires, and the bond pads;
- and
- a second molded resin containing second fillers having particle sizes larger than the opening size of the wire mesh and sealing, outside the wire mesh and via the first molded resin and the wire mesh, the semiconductor chip, the bonding wires, and the bond pads.
4 more elements
Dependencies are inferred from the claim text.