Dual color via patterning
AssigneeInternational Business Machines Corporation
InventorsHsueh-Chung Chen, Yann Mignot, Su Chen Fan, Mary Claire Silvestre, Chi-Chun Liu, Junli Wang
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Abstract
A device includes: a first dielectric material; a first metal line in the first dielectric material; a second dielectric material disposed on the first dielectric material and the first metal line; a second metal line in the second dielectric material; and a plurality of metal vias disposed on a same level and connecting the first metal line and the second metal line, wherein the plurality of metal vias comprise a first top via and a bottom via having different sidewall profile angles.
Claims20
A device comprising:
- a first dielectric material;
- a first metal line in the first dielectric material;
- a second dielectric material disposed on the first dielectric material and the first metal line;
- a second metal line in the second dielectric material, wherein the first metal line and the second metal line have angled sidewalls;
- and
- a plurality of metal vias disposed on a same level and connecting the first metal line and the second metal line, wherein the plurality of metal vias comprise a first top via and a bottom via having different sidewall profile angles.
A device comprising:
- a first dielectric material;
- a first metal line in the first dielectric material;
- a second dielectric material disposed on the first dielectric material and the first metal line;
- a second metal line in the second dielectric material, wherein the first metal line and the second metal line have angled sidewalls;
- and
- a plurality of metal vias having a same height and connecting the first metal line and the second metal line,
- wherein the plurality of metal vias comprise a first top via and a bottom via having inverse sidewall profile angles.
A method of manufacturing a dual damascene device comprising:
- providing a substrate;
- forming a trench in the substrate;
- depositing a first metal in the trench by a first metallization;
- patterning the first metal to form a first metal via by a first color definition;
- depositing a second dielectric material over the substrate and the first metal;
- patterning the second dielectric material to form a second trench and a second via using a second color definition, wherein the second trench exposes at least a portion of the first metal via, and the second via exposes a portion of the first metal;
- and
- depositing a second metal in the second trench and the second via by a second metallization to form a second metal via.
Dependencies are inferred from the claim text.