Device, method and system to prevent pattern collapse in a semiconductor structure

A method of forming a semiconductor device including:

• providing a stack on a substrate, the stack including a plurality of device layers comprising electrically conductive layers;
• patterning the stack using a first etch to form first trenches extending therethrough and first pillars between the trenches;
• providing a first carbon-containing liner on sidewalls of the first trenches;
• wet cleaning and drying the stack after providing the first carbon-containing liner;
• patterning the stack, after wet cleaning and drying the stack, using a second etch to deepen the first trenches and lengthen the first pillars to form second trenches extending through the stack and second pillars between the second trenches;
• providing a second carbon-containing liner on sidewalls of the second trenches;
• wet cleaning and drying the stack after providing the second carbon-containing liner;
• filling spaces between the first pillars and the second pillars with one or more materials;
• and
• electrically coupling contact lines to the electrically conductive layers to form the semiconductor device.

A semiconductor module comprising:

• input/output (I/O) circuitry to couple the semiconductor module with an external controller;
• one or more dies, each of the dies including:
• a multilayered semiconductor structure including a substrate, a plurality of device layers on the substrate defining trenches extending therethrough and pillars between the trenches, one or more materials filling the trenches, and a carbon-containing liner along sidewalls of the trenches and disposed between the pillars and the one or more materials filling the trenches, one or more of the plurality of device layers including electrically conductive layers, wherein the sidewalls define a stepped configuration in a depthwise direction of the trenches, and wherein the carbon-containing liner includes a first carbon containing liner portion extending along the sidewalls and ending at a first step of the stepped configuration, and a second carbon containing liner portion extending along the sidewalls and ending at a second step of the stepped configuration;
• and
• electrical contact lines electrically coupled to the one or more of the plurality of device layers.