Semiconductor device, imaging unit, and electronic apparatus

An imaging unit, comprising:

• an imaging device;
• and
• a semiconductor device on which the imaging device is mounted, wherein the semiconductor device includes:
• a semiconductor substrate that has a first surface and a second surface on a side opposite to the first surface;
• a first metal film pattern that includes a first portion and a second portion, wherein
• the first portion covers a first regional portion of the first surface,
• the second portion is stacked on the first portion,
• the second portion is smaller in area than the first portion in a plan view such that the second portion covers a portion of an upper surface of the first portion in the plan view,
• the upper surface of the first portion is parallel to the first surface of the semiconductor substrate,
• the second portion includes a third surface and a fourth surface on a side opposite to the third surface, and
• the third surface is substantially parallel to the fourth surface;
• a second metal film pattern that includes a third portion and a fourth portion, wherein
• the third portion covers a second regional portion of the first surface different from the first regional portion of the first surface, and
• the fourth portion is stacked on the third portion to cover a portion of the third portion;
• and
• an insulating layer between the second portion and the fourth portion.

An electronic apparatus, comprising:

• an imaging device;
• and
• a semiconductor device on which the imaging device is mounted, wherein the semiconductor device includes:
• a semiconductor substrate that has a first surface and a second surface on a side opposite to the first surface;
• a first metal film pattern that includes a first portion and a second portion, wherein
• the first portion covers a first regional portion of the first surface,
• the second portion is stacked on the first portion,
• the second portion is smaller in area than the first portion in a plan view such that the second portion covers a portion of an upper surface of the first portion in the plan view,
• the upper surface of the first portion is parallel to the first surface of the semiconductor substrate,
• the second portion includes a third surface and a fourth surface on a side opposite to the third surface, and
• the third surface is substantially parallel to the fourth surface;
• a second metal film pattern that includes a third portion and a fourth portion, wherein
• the third portion covers a second regional portion of the first surface different from the first regional portion of the first surface, and
• the fourth portion is stacked on the third portion to cover a portion of the third portion;
• and
• an insulating layer between the second portion and the fourth portion.