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US 12,112,995 B2Granted
Low capacitance through substrate via structures
AssigneeMicron Technology, Inc.
InventorsDeepak C. Pandey, Haitao Liu, Chandra Mouli
Life of this patent
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Abstract
Apparatuses and methods are disclosed herein for the formation of low capacitance through substrate via structures. An example apparatus includes an opening formed in a substrate, wherein the opening has at least one sidewall, a first dielectric at least formed on the sidewall of the opening, a first conductor at least formed on the first dielectric, a second dielectric at least formed on the first conductor, and a second conductor at least formed on a sidewall of the second dielectric.
Claims21
An apparatus, comprising:
- an opening formed in a substrate, wherein the opening has at least one sidewall;
- a first dielectric at least formed on the sidewall of the opening;
- a first conductor at least formed on the first dielectric;
- a second dielectric at least formed on the first conductor;
- a second conductor at least formed on a sidewall of the second dielectric;
- and
- a conductive coupling configured to short the first conductor to the substrate via a voltage reference node and extend across the first dielectric.
4 more elements
An apparatus, comprising:
- a substrate with a through substrate via formed in an opening therein, wherein the through substrate via comprises:
- a first dielectric formed on a sidewall of the opening;
- a second dielectric;
- a first conductor disposed between the first and second dielectrics;
- and
- a second conductor disposed on the second dielectric, wherein a conductive coupling extends across the first dielectric and couples the first conductor to a voltage reference in the substrate.
3 more elements
An apparatus comprising:
- an opening formed in a substrate, wherein the opening has at least one sidewall;
- a first layer formed on the sidewall of the opening;
- a conductive layer formed on the first layer;
- a second layer formed on the conductive layer, wherein the first layer, the conductive layer and the second layer are configured to fill a part of the opening;
- and
- a conductor configured to fill a remaining part of the opening, wherein a conductive coupling extends above the first layer and couples the conductive layer to a voltage reference in the substrate.
3 more elements
An apparatus comprising:
- an opening in a substrate, wherein the opening has at least one sidewall;
- a dielectric layer on the sidewall of the opening;
- a conductive barrier layer comprising tantalum on the dielectric layer;
- a conductive seed layer comprising copper on the conductive barrier layer, wherein the dielectric layer, the conductive barrier layer, and the conductive seed layer are configured to fill a part of the opening;
- and
- a conductor configured to at least partially fill a remaining part of the opening.
3 more elements
Dependencies are inferred from the claim text.