Power semiconductor module having a pressure device acting on a switching device
AssigneeSemikron Danfoss Elektronik GmbH & Co. KG
InventorsStefan Oehling, Matthias Hager, Verena Gulitsch, Harald Kobolla
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AssigneeSemikron Danfoss Elektronik GmbH & Co. KG
InventorsStefan Oehling, Matthias Hager, Verena Gulitsch, Harald Kobolla
Estimating the term…
A power semiconductor module has a base plate with a housing and a switching device. The switching device has a substrate and a connecting device with a first and a second main face. A group of power semiconductor components is arranged on a conductor track of the substrate, and has a group midpoint. A pressure device is formed on the substrate in the normal direction to exert pressure, which pressure device has a pressure body and a pressure inducing body, wherein a pressure element is arranged protruding from the pressure body, wherein the pressure element presses onto a pressure section of the second main face of the connecting device, and wherein the pressure inducing body has a pressure transmission section with a pressure transmission point.
A power semiconductor module, comprising:
Dependencies are inferred from the claim text.