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US 12,112,987 B2Granted
Semiconductor device with fin end spacer plug and method of manufacturing the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTzu-Chung Wang, Tung Ying Lee
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Abstract
A semiconductor device includes a plurality of fins on a substrate, a fin end spacer plug on an end surface of each of the plurality of fins and a fin liner layer, an insulating layer on the plurality of fins, and a source/drain epitaxial layer in a source/drain recess in each of the plurality of fins.
Claims20
A semiconductor device, comprising:
- a first fin and a second fin each with a fin liner layer, on a substrate;
- a fin end spacer plug on end surfaces of the first and second fins;
- gate electrodes disposed over the first and second fins, respectively;
- a dummy gate electrode over the fin end spacer plug and one of the first or the second fins;
- an insulating layer on the first and second fins;
- and
- a source/drain epitaxial layer in a source/drain recess in each of the first and second fins.
4 more elements
A semiconductor device, comprising:
- a first fin and a second fin each with a fin liner layer, on a substrate;
- a fin end spacer plug on end surfaces of the first and second fins;
- gate electrodes disposed over the first and second fins, respectively;
- a dummy gate electrode over the fin end spacer plug;
- an insulating layer on the first and second fins;
- and
- a source/drain epitaxial layer in a source/drain recess in each of the first and second fins, wherein no gate electrode and no dummy gate electrode are disposed above edges of the first and second fins.
4 more elements
A semiconductor device, comprising:
- a first fin and a second fin along a line extending in a first direction and separated from each other;
- a fin end spacer plug extending in a second direction perpendicular to the first direction and disposed between ends of the first fin and the second fin;
- gate electrodes respectively disposed over the first fin and the second fin;
- and
- a dummy gate electrode disposed over the fin end spacer plug and between the ends of the first fin and the second fin, wherein the dummy gate electrode is separated from the ends of the first and second fins by the fin end spacer plug.
2 more elements
Dependencies are inferred from the claim text.