FinFET device and method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKun-Mu Li, Heng-Wen Ting, Hsueh-Chang Sung, Yen-Ru Lee, Chien-Wei Lee
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Abstract
A device includes a fin over a substrate, the fin including a first end and a second end, wherein the first end of the fin has a convex profile, an isolation region adjacent the fin, a gate structure along sidewalls of the fin and over the top surface of the fin, a gate spacer laterally adjacent the gate structure, and an epitaxial region adjacent the first end of the fin.
Claims20
A method of forming a semiconductor device, the method comprising:
- forming a semiconductor structure over a substrate;
- forming a dummy structure over the semiconductor structure;
- forming a gate spacer on a sidewall of the dummy structure;
- performing a first etching process on the semiconductor structure adjacent the dummy structure;
- performing a second etching process on the semiconductor structure to form a reshaped semiconductor structure, wherein a first end of the reshaped semiconductor structure is a convex sidewall in a plan view when viewed from above the dummy structure;
- and
- epitaxially growing a source/drain region adjacent ends of the reshaped semiconductor structure.
A method of forming a semiconductor device, the method comprising:
- forming a semiconductor strip over a substrate;
- forming a dummy structure along sidewalls and a top surface of the semiconductor strip;
- forming a gate spacer over the semiconductor strip adjacent the dummy structure;
- removing a first portion of the semiconductor strip adjacent the dummy structure using a first etching process, wherein a sidewall of a first remaining portion of semiconductor strip has a first curvature after removing the first portion;
- after removing the first portion, removing a second portion of the semiconductor strip adjacent the dummy structure using a second etching process, wherein a sidewall of a second remaining portion of semiconductor strip has a second curvature after removing the second portion, wherein the second curvature is greater than the first curvature;
- and
- epitaxially growing a source/drain region adjacent the sidewall of the second remaining portion.
A method of forming a semiconductor device, the method comprising:
- forming a gate structure on a top surface of a semiconductor structure;
- forming a gate spacer along sidewalls of the gate structure;
- recessing the semiconductor structure adjacent the gate structure and the gate spacer to form a recess;
- enlarging the recess, wherein after enlarging the recess a sidewall of a remaining portion of the semiconductor structure facing the recess has a convex curvature in a single plan view when viewed from above the gate structure;
- and
- epitaxially growing a source/drain region adjacent the sidewall of the remaining portion.
Dependencies are inferred from the claim text.