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US 12,112,984 B2Granted
Contact features of semiconductor devices
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTsui-Ling Yen, Chien-Hung Chen
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Abstract
A semiconductor device includes a conductive feature, a dielectric layer disposed over the conductive feature, and a contact feature extending through the dielectric layer. The contact feature has an upper portion and a lower portion. The upper portion is spaced apart from the dielectric layer with a spacer layer. The lower portion is electrically coupled to the conductive feature and in contact with the dielectric layer.
Claims20
A semiconductor device, comprising:
- a first transistor including a first conductive feature;
- a second transistor adjacent the first transistor, the second transistor including a second conductive feature and a third conductive feature adjacent the second conductive feature;
- a first dielectric layer disposed over the first transistor and the second transistor;
- and
- a first contact feature extending through the first dielectric layer and including an upper portion over a lower portion, the lower portion directly coupled to the first conductive feature and the second conductive feature,
- wherein a top surface of the second conductive feature is below a bottom surface of the third conductive feature,
- wherein the upper portion of the first contact feature is laterally separated from a first inner sidewall of the first dielectric layer by a second dielectric layer, and the lower portion of the first contact feature is in contact with the first inner sidewall of the first dielectric layer,
- wherein the lower portion has a first lateral width and the upper portion has a second lateral width substantially greater than the first lateral width,
- wherein the first contact feature includes a lateral boundary at an intersection of the upper portion and the lower portion that is in physical contact with the first dielectric layer,
- wherein the first conductive feature and the second conductive feature each include a drain feature or a source feature,
- wherein the third conductive feature includes a gate feature, and
- wherein a portion of the first dielectric layer adjacent the lower portion is vertically separated from each of the first conductive feature and the second conductive feature.
9 more elements
A semiconductor device, comprising:
- a first transistor and a second transistor over a substrate, the first transistor including a source feature adjacent a gate feature, the second transistor including a drain feature, the source feature extending to contact the drain feature, and a top surface of each of the source feature and the drain feature disposed below a bottom surface of the gate feature;
- a dielectric layer disposed over the source feature and the drain feature;
- and
- a contact feature extending through the dielectric layer,
- wherein the contact feature has an upper portion and a lower portion, the upper portion being spaced apart from the dielectric layer with a spacer layer, and the lower portion being directly coupled to the source feature and the drain feature and in contact with the dielectric layer,
- wherein the lower portion has a first lateral width and the upper portion has a second lateral width substantially greater than the first lateral width,
- wherein the upper portion has a vertical height perpendicular to the second lateral width, a ratio of the vertical height to the second lateral width being greater than 1.5,
- wherein a portion of first dielectric layer adjacent the lower portion is vertically separated from each of the source feature and the drain feature, and
- wherein the contact feature includes a lateral boundary at an intersection of the upper portion and the lower portion that is in direct contact with the dielectric layer.
6 more elements
The semiconductor device of 9, wherein sidewalls of the lower portion of the contact feature are free of contact with the spacer layer.
A semiconductor device, comprising:
- a first transistor over a substrate and including a first conductive feature;
- a second transistor adjacent the first transistor and including a second conductive feature and a third conductive feature adjacent the second conductive feature, wherein the first conductive feature and the second conductive feature each include a drain feature or a source feature, and wherein the third conductive feature includes a gate feature;
- a first dielectric layer disposed over the first conductive feature and the second conductive feature;
- a contact feature extending through the first dielectric layer and including an upper portion over a lower portion, wherein the lower portion has a first lateral width and is in direct contact with both the first conductive feature and the second conductive feature, wherein the upper portion has a second lateral width substantially greater than the first lateral width, wherein the upper portion has a vertical height perpendicular to the second lateral width, a ratio of the vertical height to the second lateral width being greater than 1.5, and wherein a portion of the first dielectric layer adjacent the lower portion is vertically separated from each of the first conductive feature and the second conductive feature;
- and
- a second dielectric layer, interposed between the first dielectric layer and the contact feature, wherein a sidewall of the lower portion of the contact feature is free of contact with the second dielectric layer.
3 more elements
Dependencies are inferred from the claim text.