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US 12,112,973 B2Granted
Semiconductor structure and method for manufacturing the same
AssigneeChangxin Memory Technologies, Inc.
InventorTao Li
Life of this patent
Estimating the term…
Abstract
The embodiment of the present invention provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure comprises: a substrate having a trench therein; a first layer covering the bottom and the sidewall of the trench; and a second layer covering the surface of the first layer, wherein the step coverage of the second layer is different from the step coverage of the first layer. The embodiment of the invention is conducive to obtaining a multi-layer structure with preset step coverage.
Claims11
A semiconductor structure, comprising:
- a substrate of silicon, having a trench therein;
- a first layer covering a bottom and a sidewall of the trench;
- a second layer covering a surface of the first layer, wherein a step coverage of the second layer is different from a step coverage of the first layer;
- and,
- wherein the first layer is formed by a low pressure chemical vapor deposition process, further comprises:
- a gas pressure at the top of the trench greater than a gas pressure at the bottom of the trench;
- and
- forming functional groups within the trench, and the functional groups serve to react with the substrate to generate preset material molecules, wherein a density of the functional groups at the bottom of the trench is lower than the density of the functional groups at a top of the trench;
- and
- the sidewall of the trench comprises a bottom sidewall and a top sidewall, wherein the first layer covering the bottom sidewall is thinner than the first layer covering the top sidewall in a direction perpendicular to the sidewall of the trench.
7 more elements
A manufacturing method of a semiconductor structure, comprising:
- providing a substrate of silicon having a trench therein;
- forming a first layer covering a bottom and a sidewall of the trench;
- forming a second layer covering a surface of the first layer, wherein a step coverage of the second layer is different from a step coverage of the first layer;
- and,
- wherein the first layer is formed by a low pressure chemical vapor deposition process, further comprises:
- a gas pressure at the top of the trench greater than a gas pressure at the bottom of the trench;
- and
- forming functional groups within the trench, and the functional groups serve to react with the substrate to generate preset material molecules, wherein a density of the functional groups at the bottom of the trench is lower than the density of the functional groups at a top of the trench;
- and
- the sidewall of the trench comprises a bottom sidewall and a top sidewall, wherein the first layer covering the bottom sidewall is thinner than the first layer covering the top sidewall in a direction perpendicular to the sidewall of the trench.
7 more elements
Dependencies are inferred from the claim text.