Method for producing optoelectronic devices

A method for producing optoelectronic semiconductor devices, the method comprising:

• providing a growth substrate with a plurality of semiconductor bodies for the semiconductor devices, wherein each semiconductor body comprises electrical contact structures and a separation layer arranged towards the growth substrate;
• arranging a rigid first auxiliary carrier on a side of the semiconductor bodies facing away from the growth substrate, wherein the first auxiliary carrier comprises a first detachment layer;
• detaching the growth substrate by first laser radiation, wherein the first laser radiation is absorbed in the separation layer;
• arranging a rigid second auxiliary carrier on a side of the semiconductor bodies facing away from the first auxiliary carrier, wherein the second auxiliary carrier comprises a second detachment layer;
• detaching the first auxiliary carrier by second laser radiation, wherein the second laser radiation is absorbed in the first detachment layer and the separation layer still extending continuously over the growth substrate while detaching;
• and
• mechanically and electrically arranging the semiconductor bodies on at least one permanent carrier,
• wherein the method is performed in the recited order, and
• wherein the first laser radiation for detaching the semiconductor bodies from the growth substrate and/or the second laser radiation for detaching at least one of the auxiliary carriers is scanned over the growth substrate and/or over the at least one of the auxiliary carriers so that only individual semiconductor bodies are detached from the growth substrate and/or from the at least one of the auxiliary carriers.

A method for producing optoelectronic semiconductor devices, the method comprising:

• providing a growth substrate with a plurality of semiconductor bodies for the semiconductor devices, wherein each semiconductor body comprises electrical contact structures and a separation layer arranged towards the growth substrate;
• arranging a rigid first auxiliary carrier on a side of the semiconductor bodies facing away from the growth substrate, wherein the first auxiliary carrier comprises a first detachment layer;
• detaching the growth substrate by laser first radiation, wherein the first laser radiation is absorbed in the separation layer;
• arranging a rigid second auxiliary carrier on a side of the semiconductor bodies facing away from the first auxiliary carrier, wherein the second auxiliary carrier comprises a second detachment layer;
• detaching the first auxiliary carrier by second laser radiation, wherein the second laser radiation is absorbed in the first detachment layer and the separation layer still extending continuously over the growth substrate while detaching;
• and
• mechanically and electrically arranging the semiconductor bodies on at least one permanent carrier,
• wherein the method is performed in the recited order,
• wherein, after detaching the first auxiliary carrier, a rigid third auxiliary carrier is attached so that the third auxiliary carrier is located at the contact structures, and
• wherein subsequently the second auxiliary carrier is detached by third laser radiation and the third laser radiation is absorbed in the second detachment layer.