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US 12,112,955 B2Granted
Film formation apparatus, film formation method, and method for fabricating semiconductor device
AssigneeKioxia Corporation
InventorsYusuke Kondo, Soichi Yamazaki
Life of this patent
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Abstract
A film forming apparatus includes an electrode, a target holder configured to hold a film forming target so as to face the electrode, and a masking shield holder configured to hold a masking shield between the electrode and the target holder. The masking shield includes a lattice portion having a plurality of openings therein and a frame portion supporting the lattice portion.
Claims10
A method for manufacturing a semiconductor device, comprising:
- forming a masking layer on a processing target that is on a substrate, the masking layer comprising a first film having a plurality of primary portions partitioned by a groove region, a second film selectively within and filling the groove region;
- lithographically patterning and then etching the primary portions to form a patterned masking layer;
- and
- processing the processing target using the patterned masking layer,
- the processing target comprises a plurality of first-type films and a plurality of second-type films that are alternately stacked on the substrate.
2 more elements
A method for manufacturing a semiconductor device, comprising:
- forming a masking layer on a processing target that is on a substrate, the masking layer comprising a first film having a plurality of primary portions partitioned by a groove region, a second film selectively within and filling the groove region;
- lithographically patterning and then etching the primary portions to form a patterned masking layer;
- and
- processing the processing target using the patterned masking layer,
- wherein a hardness of the first film is greater than a hardness of the second film.
2 more elements
Dependencies are inferred from the claim text.