US 12,112,952 B2 · Methods of forming a semiconductor device including active patterns on a bonding layer and semiconductor devices formed by the same

Abstract

Methods of forming a semiconductor device and semiconductor device formed by the methods are provided. The methods of forming a semiconductor device may include providing a first substrate and a first bonding layer that is provided on the first substrate, forming a sacrificial pattern and an active pattern on a second substrate, forming a second bonding layer on the active pattern, bonding the second bonding layer onto the first bonding layer, removing the second substrate, and removing the sacrificial pattern to expose the active pattern. Forming the sacrificial pattern and the active pattern on the second substrate may include forming a preliminary sacrificial pattern and the active pattern on the second substrate and oxidizing the preliminary sacrificial pattern. The preliminary sacrificial pattern and the active pattern may be sequentially stacked on the second substrate.

Claims19

Dependent claims

A semiconductor device comprising:

a first bonding layer on a substrate;
a second bonding layer on the first bonding layer;
a plurality of active patterns stacked on the second bonding layer;
and
a gate electrode that traverses the plurality of active patterns,
wherein the plurality of active patterns comprise:
a first active pattern on the second bonding layer;
and
a second active pattern between the second bonding layer and the first active pattern,
wherein a widest width of the second active pattern is smaller than a widest width of the first active pattern,
wherein the gate electrode extends between the first active pattern and the second active pattern, and
wherein the gate electrode extends on an upper surface, a lower surface, and opposing side surfaces of the first active pattern and extends on an upper surface, a lower surface, and opposing side surfaces of the second active pattern.

9 more elements

Dependencies are inferred from the claim text.

Methods of forming a semiconductor device including active patterns on a bonding layer and semiconductor devices formed by the same

Life of this patent

Methods of forming a semiconductor device including active patterns on a bonding layer and semiconductor devices formed by the same

Life of this patent

Abstract

Claims19