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US 12,112,947 B2Granted
Method of crystallizing amorphous silicon film and deposition apparatus
AssigneeTokyo Electron Limited
InventorsTatsuya Miyahara, Daisuke Suzuki, Yoshihiro Takezawa, Yuki Tanabe
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Abstract
A method of crystallizing an amorphous silicon film includes depositing the amorphous silicon film on a seed layer formed over a substrate while heating the amorphous silicon film at a first temperature, and forming a crystal nucleus in an outer layer of the amorphous silicon film by causing migration of silicon in the outer layer by heating the amorphous silicon film at a second temperature higher than the first temperature.
Claims11
A method of crystallizing an amorphous silicon film, comprising:
- depositing the amorphous silicon film on a seed layer formed over a substrate while heating the amorphous silicon film to a first temperature;
- forming a crystal nucleus in an outer layer of the amorphous silicon film by causing migration of silicon in the outer layer by heating the amorphous silicon film to a second temperature higher than the first temperature;
- and
- after forming the crystal nucleus, annealing the amorphous silicon film at a third temperature higher than the second temperature, wherein
- in the annealing, the crystal nucleus is grown from the outer layer to a bottom surface side.
2 more elements
Dependencies are inferred from the claim text.