Method for forming film and processing apparatus

A method for forming a film, the method comprising:

• forming a boron nitride film on a substrate, and
• forming a boron-containing silicon film on the boron nitride film,
• wherein a ratio of elements of boron (B) and nitrogen (N) in the boron nitride film is B:50% and N:50%, and
• wherein the forming of the boron nitride film is performed under conditions that a 10% B2H6/H2 gas flow rate is 700 sccm;
• an NH3 gas flow rate is 100 sccm;
• a film-forming temperature is 300° C.;
• and a processing chamber pressure is 0.5 Torr (66.7 Pa), and then the forming of the boron-containing silicon film on the boron nitride film is performed under conditions that a 10% B2H6/H2 gas flow rate is 800 sccm;
• a SiH4 gas flow rate is 666 sccm;
• a film-forming temperature is 250° C.;
• and a processing chamber pressure is 0.5 Torr (66.7 Pa).