Deposition process for forming semiconductor device and system

A method comprising:

• forming a plurality of semiconductor fins on a substrate;
• forming a gate structure extending over the plurality of semiconductor fins;
• forming spacers on sidewalls of the gate structure;
• performing an etching process to recess the gate structure and the spacers;
• and
• performing a deposition process to form a hard mask material on the gate structure and the spacers, wherein the deposition process comprises:
• introducing a first precursor into a process chamber as a gas, wherein the first precursor remains a gas during the deposition process;
• and
• introducing a second precursor into the process chamber as a gas, wherein the second precursor condenses into a liquid during the deposition process.

A method comprising:

• forming a fin protruding from a substrate;
• forming an isolation region surrounding the fin;
• forming a gate stack over the fin;
• forming a source/drain region in the fin adjacent the gate stack;
• forming an inter-layer dielectric (ILD) over the source/drain region, wherein a top surface of the gate stack is recessed from a top surface of the ILD;
• forming a hard mask covering the gate stack, wherein a top surface of the hard mask is level with the top surface of the ILD, wherein the hard mask is free of seams, wherein the hard mask has a height:width aspect ratio in the range between 1:3 and 1:25;
• and wherein the hard mask comprises a metal oxide;
• and
• forming a conductive feature extending through the hard mask to contact the gate stack.