Cleaning process and semiconductor processing method

A cleaning process, for cleaning a surface of a semiconductor structure, on which a residue layer is formed, wherein the cleaning process comprises:

• providing a first reaction gas and a second reaction gas to the surface of the semiconductor structure, wherein the first reaction gas reacts with the second reaction gas to remove the residue layer while forming a protection layer on the surface of the semiconductor structure;
• wherein the semiconductor structure comprises a doped polysilicon substrate or comprises a doped polysilicon layer, and the residue layer is located on a surface of the doped polysilicon substrate or a surface of the doped polysilicon layer;
• and
• wherein the residue layer comprises oxide particles, the first reaction gas reacts with the second reaction gas to generate ammonia gas and hydrogen fluoride, and the ammonia gas and hydrogen fluoride react with the residue layer to remove the residue layer.