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US 12,112,927 B2Granted
Substrate processing apparatus and method
AssigneePicosun Oy
InventorVäinö Kilpi
Life of this patent
Estimating the term…
Abstract
A substrate processing apparatus (100), comprising a reaction chamber (50), an outer chamber (80) at least partly surrounding the reaction chamber (50) and forming an intermediate volume (70) therebetween, and a substrate support (40) within the reaction chamber (50), comprising a hollow inner volume (42), wherein the hollow inner volume (42) and the intermediate volume (70) are in fluid communication through a channel (45) extending from the hollow inner volume (42) to the intermediate volume (70).
Claims10
A substrate processing apparatus, comprising:
- a reaction chamber;
- an outer chamber at least partly surrounding the reaction chamber and forming an intermediate volume therebetween;
- and
- a substrate support within the reaction chamber, comprising a hollow inner volume,
- wherein the hollow inner volume and the intermediate volume are in fluid communication through a channel extending from the hollow inner volume to the intermediate volume,
- and wherein the channel houses wirings which wirings extend within the channel from the substrate support to the intermediate volume.
3 more elements
A substrate processing apparatus, comprising:
- a reaction chamber;
- an outer chamber at least partly surrounding the reaction chamber and forming an intermediate volume therebetween;
- and
- a substrate support within the reaction chamber, comprising a hollow inner volume,
- wherein the hollow inner volume and the intermediate volume are in fluid communication through a channel extending from the hollow inner volume to the intermediate volume;
- an actuator configured to lower and raise the reaction chamber, and a longitudinally extensional tubular part in a reaction chamber exhaust line allowing a vertical movement;
- and
- wirings wound around the longitudinally extensional tubular part.
5 more elements
Dependencies are inferred from the claim text.