Plasma processing method and plasma processing apparatus

A plasma processing method for generating microwave plasma in a chamber and performing plasma processing on a substrate, comprising:

• arranging the substrate in a region away from a microwave plasma generation region in the chamber;
• setting a pressure in the chamber to 1 Torr (133.3 Pa) or higher;
• introducing microwaves from a microwave plasma source and a processing gas containing a reducing gas into the chamber to generate microwave plasma, and diffusing active species from the microwave plasma in the microwave plasma generation region to the substrate;
• and
• applying a radio frequency (RF) power to the substrate to generate cathode-coupled plasma near the substrate and attractions near the substrate to the substrate,
• wherein the substrate has a TiN film on a surface thereof, and the plasma processing is surface modification for reducing a resistivity of the TiN film using a hydrogen gas as the reducing gas.