Memory row-hammer mitigation

A method, comprising:

• receiving, at a memory device comprising a first non-volatile memory and a second non-volatile memory, a command to access a region of the second non-volatile memory;
• updating a value of a counter associated with the region of the second non-volatile memory based at least in part on receiving the command to access the region of the second non-volatile memory, wherein the value of the counter is associated with a quantity of access operations performed on the region of the second non-volatile memory before transitioning from a first power state to a second power state;
• receiving, after updating the value of the counter associated with the memory device, a command to transition from the first power state to the second power state;
• and
• storing the value of the counter to the first non-volatile memory based at least in part on receiving the command to transition from the first power state to the second power state, the value stored to the first non-volatile memory indicating whether to perform an access operation on the region of the second non-volatile memory upon transitioning from the second power state to the first power state.

An apparatus comprising:

• a memory device;
• and
• a controller coupled with the memory device, the controller configured to cause the apparatus to:
• transition, by the memory device comprising a first non-volatile memory and a second non-volatile memory, from a second power state to a first power state;
• receiving, based at least in part on transitioning from the second power state to the first power state, a command to access a region of the second non-volatile memory;
• reading a value of a counter stored to the first non-volatile memory based at least in part on receiving the command to access the region of the second non-volatile memory, wherein the value of the counter is associated with a quantity of access operations performed on the second non-volatile memory before transitioning from the second power state to the first power state;
• and
• refraining from accessing the region of the second non-volatile memory based at least in part on the value of the counter stored to the first non-volatile memory satisfying a threshold value.

An apparatus, comprising:

• a memory device;
• and
• a controller coupled with the memory device, the controller configured to cause the apparatus to:
• receive, at the memory device comprising a first non-volatile memory and a second non-volatile memory, a command to access a region of the second non-volatile memory;
• update a value of a counter associated with the region of the second non-volatile memory based at least in part on receiving the command to access the region of the second non-volatile memory, wherein the value of the counter is associated with a quantity of access operations performed on the region of the second non-volatile memory before transitioning from a first power state to a second power state;
• receive, after updating the value of the counter associated with the memory device, a command to transition from the first power state to the second power state;
• and
• store the value of the counter to the first non-volatile memory based at least in part on receiving the command to transition from the first power state to the second power state, the value stored to the first non-volatile memory indicating whether to perform an access operation on the region of the second non-volatile memory upon transitioning from the second power state to the first power state.