Modification of a command timing pattern

A method, comprising:

• transmitting a first activation command to activate a first set of memory cells in a first bank of a memory device;
• transmitting, based at least in part on the first activation command, a quantity of deselect commands, the quantity of deselect commands based at least in part on one or both of a row activation command delay or a column activation command delay, and based at least in part on one or both of a row address to column address delay or an activation command window;
• and
• transmitting, based at least in part on the deselect commands, a second activation command to activate a second set of memory cells in a second bank of the memory device.

An apparatus, comprising:

• a controller coupled with a memory device and configured to cause the apparatus to:
• receive a first activation command to activate a first set of memory cells in a first bank of the memory device;
• receive, based at least in part on the first activation command, a quantity of deselect commands, the quantity of deselect commands based at least in part on one or both of a row activation command delay or a column activation command delay, and based at least in part on one or both of a row address to column address delay or an activation command window;
• and
• receive, based at least in part on the deselect commands, a second activation command to activate a second set of memory cells in a second bank of the memory device.

An apparatus, comprising:

• a controller coupled with a host device, wherein the controller is configured to cause the apparatus to:
• transmit a first activation command to activate a first set of memory cells in a first bank of a memory device;
• transmit, based at least in part on the first activation command, a quantity of deselect commands, the quantity of deselect commands based at least in part on one or both of a row activation command delay or a column activation command delay, and based at least in part on one or both of a row address to column address delay or an activation command window;
• and
• transmit, based at least in part on the deselect commands, a second activation command to activate a second set of memory cells in a second bank of the memory device.

A non-transitory computer-readable medium storing code, the code comprising instructions executable by a processor to:

• receive a first activation command to activate a first set of memory cells in a first bank of a memory device;
• receive, based at least in part on the first activation command, a quantity of deselect commands, the quantity of deselect commands based at least in part on one or both of a row activation command delay or a column activation command delay, and based at least in part on one or both of a row address to column address delay or an activation command window;
• and
• receive, based at least in part on the deselect commands, a second activation command to activate a second set of memory cells in a second bank of the memory device.