Sense amplifier circuit and data read method
AssigneeChangxin Memory Technologies, Inc.
InventorsGuifen Yang, Sungsoo Chi
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AssigneeChangxin Memory Technologies, Inc.
InventorsGuifen Yang, Sungsoo Chi
Estimating the term…
Embodiments relate to a sense amplifier circuit and a data read method. The sense amplifier circuit includes: a first P-type transistor connected to a first signal terminal; a second P-type transistor connected to a second signal terminal; a first N-type transistor connected to a third signal terminal; a second N-type transistor connected to a fourth signal terminal; a first offset cancellation subcircuit configured to connect a first read bit line to a second complementary read bit line in response to a first offset cancellation signal; a second offset cancellation subcircuit configured to connect a first complementary read bit line to a second read bit line in response to a second offset cancellation signal; a first write-back subcircuit configured to connect the first complementary read bit line to the second complementary read bit line in response to a first write-back signal; and a second write-back subcircuit.
A sense amplifier circuit, comprising:
Dependencies are inferred from the claim text.