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US 12,112,822 B2Granted
Multi-channel memory device capable of switching redundancy memory blocks to replace failed memory block
AssigneeWinbond Electronics Corp.
InventorChih-Feng Lin
Life of this patent
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Abstract
A multi-channel memory device includes N first memory blocks, a first redundancy memory block, and N first interface circuits. Each of the first interface circuits is coupled to two of the first memory blocks and the first redundancy memory block. The first interface circuits respectively select N first selected memory blocks in the first memory block and the first redundancy memory block according to a plurality of first selection signals, where N is a positive integer greater than 1.
Claims16
A multi-channel memory device, comprising:
- N first memory blocks, where N is a positive integer greater than 1;
- a first redundancy memory block;
- N first interface circuits, wherein each of the first interface circuits is coupled to two of the first memory blocks and the first redundancy memory block, and each of the first interface circuits selects each of N first selected memory blocks in the first memory blocks and the first redundancy memory block to be coupled to a plurality of first input and output interfaces according to a plurality of first selection signals;
- and
- a decoder coupled to the storage and generating the first selection signals according to decoded error information,
- wherein the decoder generates a plurality of power control signals according to the decoded error information, and each of the first interface circuits turns on or cuts off power of each of the first memory blocks and the first redundancy memory block according to each of the power control signals.
3 more elements
Dependencies are inferred from the claim text.