Power leakage blocking in low-dropout regulator
AssigneeYangtze Memory Technologies Co., Ltd.
InventorRuxin Wei
Life of this patent
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AssigneeYangtze Memory Technologies Co., Ltd.
InventorRuxin Wei
Estimating the term…
In certain aspects, a circuit includes an amplifier, a first transistor, a second transistor, a third transistor, a signal pair generation circuit, and a leakage track bias generator circuit connected to the signal pair generation circuit. A gate terminal of the first transistor is connected to an output of the amplifier, and a first terminal of the first transistor is connected to an input of the amplifier. A first terminal of the second transistor is connected to a second terminal of the first transistor. A first terminal of the third transistor is connected to the first terminal of the first transistor, and a second terminal of the third transistor is connected to a second terminal of the second transistor. The signal pair generation circuit is connected to a gate terminal of the second transistor and a gate terminal of the third transistor. The leakage track bias generator circuit includes a resistor, and a first terminal of the resistor is connected to the ground.
A circuit, comprising:
A circuit, comprising:
A memory device, comprising:
Dependencies are inferred from the claim text.