Semiconductor storage device

A semiconductor storage device, comprising:

• a voltage generation circuit;
• a first plurality of conductive layers arranged along a first direction, extending along a second direction crossing the first direction, and including first, second, and third conductive layers, the first conductive layer being between the second and third conductive layers;
• a second plurality of conductive layers arranged along the first direction, extending along the second direction, including fourth, fifth, and sixth conductive layers at positions corresponding to the first through third conductive layers and separated therefrom in the second direction;
• a first semiconductor layer extending along the first direction between the first and second pluralities;
• and
• a charge storage layer extending along the first direction and including a first portion between the first semiconductor layer and the first plurality and a second portion between the first semiconductor layer and the second plurality, wherein
• the voltage generation circuit is configured to, in a first verification operation of a first write operation in which a program voltage has been applied to the first conductive layer, apply:
• a verification voltage to the first conductive layer,
• a first voltage smaller than the verification voltage to the fourth conductive layer,
• a read path voltage larger than the verification voltage to the second and fifth conductive layers, and
• a second voltage smaller than the read path voltage to the third conductive layer or the sixth conductive layer.