Forward looking algorithm for vertical integrated cross-point array memory

A memory device comprising:

• a memory array having a first and second plurality of cells;
• a controller configured to:
• apply a first ramping voltage with a first predetermined increment for each of a plurality of ramping steps of the first ramping voltage to read the first plurality of cells;
• count, among the first plurality of cells at each ramping step of the first ramping voltage, a first number of cells at a logic 1 state;
• compare the first number with a first predetermined threshold at each ramping step of the first ramping voltage;
• determine a first voltage reached by the first ramping voltage, at the first voltage the first number becoming equal to or higher than the first predetermined threshold;
• apply a second voltage to read the second plurality of cells, the second voltage being lower than the first voltage by a first predetermined amount;
• and
• apply a second ramping voltage ramping up from the second voltage with a second predetermined increment for each ramping step to read the second plurality of cells, the second predetermined increment being lower than the first predetermined increment by a second predetermined amount.

A method for reading a memory array, the method comprising:

• simultaneously applying a first voltage and second voltage to read a first and second plurality of memory cells, respectively, the first voltage being higher than the second voltage by a first predetermined amount, the first plurality of memory cells having a known pattern;
• counting a first number of cells turned to a logic 1 state in the first plurality of memory cells;
• and
• subsequently applying a third voltage to read the second plurality of memory cells in response to the counting, wherein the third voltage is higher than the first voltage by either a second predetermined amount or a third predetermined amount lower than the second predetermined amount, wherein the second predetermined amount is chosen when the first number is lower than a first predetermined threshold, and the third predetermined amount is chosen when the first number is equal to or higher than the first predetermined threshold.