Magnetoresistive random access memory device

A magnetoresistive random access memory device, comprising:

• a spin orbit torque structure extending in a first direction, the spin orbit torque structure having a structure in which a metal oxide layer pattern, a ferromagnetic pattern including a horizontal magnetic material, and a non-magnetic pattern including a non-magnetic metal material are sequentially stacked;
• a free layer pattern directly contacting the spin orbit torque structure, the free layer pattern having a magnetization direction perpendicular to an upper surface of the spin orbit torque structure, and the magnetization direction being changeable in response to spin currents generated in the spin orbit torque structure;
• a tunnel barrier pattern on the free layer pattern;
• and
• a pinned layer pattern on the tunnel barrier pattern, the pinned layer pattern having a vertical magnetization direction that is fixed.

A magnetoresistive random access memory device, comprising:

• a metal oxide layer pattern;
• a ferromagnetic pattern directly contacting an upper surface of the metal oxide layer pattern, and the ferromagnetic pattern including a horizontal magnetic material;
• a non-magnetic pattern directly contacting an upper surface of the ferromagnetic pattern, the non-magnetic pattern including a non-magnetic metal material;
• a free layer pattern directly contacting a portion of an upper surface of the non-magnetic pattern, the free layer pattern having a magnetization direction perpendicular to the upper surface of the non-magnetic pattern, and the magnetization direction being changeable in response to spin currents generated in a stacked structure including the metal oxide layer pattern, the ferromagnetic pattern, and the non-magnetic pattern;
• a tunnel barrier pattern on the free layer pattern;
• and
• a pinned layer pattern on the tunnel barrier pattern, the pinned layer pattern having a magnetization direction in a vertical direction that is fixed;
• wherein:
• the spin currents are generated as an in-plane current is applied to the stacked structure including the metal oxide layer pattern, the ferromagnetic pattern, and the non-magnetic pattern, and
• the spin currents include a spin current generated by a spin Hall effect, a first interface spin current generated at a first interface between the metal oxide layer pattern and the ferromagnetic pattern, and a second interface spin current generated at a second interface between the ferromagnetic pattern and the non-magnetic pattern.