Compact MRAM architecture with magnetic bottom electrode

A method for forming a compact MRAM (magnetoresistive random-access memory) device with a reduced parasitic resistance capability, the method comprising:

• forming a substrate;
• forming a magnetic stack on the T-shape magnetic bottom electrode, wherein the magnetic stack further comprises of a free layer, a tunneling barrier, a reference layer, and a coupling layer;
• forming a top electrode on the magnetic stack;
• forming a first liner over the top electrode and the magnetic stack;
• forming a first dielectric layer over the first liner;
• forming a T-shape magnetic bottom electrode on the bottom contact, further comprising:
• forming a horizontal layer over a vertical layer, wherein the horizontal layer contains a top surface and a bottom surface and the top surface has been under-polished to a roughness which further reduces stray magnetic field compensation;
• and
• disposing the t-shape magnetic bottom electrode to the coupling layer;
• forming an outer metal liner;
• and
• forming a second dielectric layer over the outer metal liner.

A computer program product for creating a compact MRAM (magnetoresistive random-access memory) device with a reduced parasitic resistance capability, the computer program product comprising:

• one or more computer readable storage media and program instructions stored on the one or more computer readable storage media, the program instructions comprising the steps of:
• forming a substrate;
• forming a magnetic stack on the T-shape magnetic bottom electrode, wherein the magnetic stack further comprises of a free layer, a tunneling barrier, a reference layer, and a coupling layer;
• forming a top electrode on the magnetic stack;
• forming a first liner over the top electrode and the magnetic stack;
• forming a first dielectric layer over the first liner;
• forming a T-shape magnetic bottom electrode on the bottom contact, further comprising:
• forming a horizontal layer over a vertical layer, wherein the horizontal layer contains a top surface and a bottom surface and the top surface has been under-polished to a roughness which further reduces stray magnetic field compensation;
• and
• disposing the t-shape magnetic bottom electrode to the coupling layer;
• forming an outer metal liner;
• and
• forming a second dielectric layer over the outer metal liner.