Strategic memory cell reliability management

A method, comprising:

• activating a set of memory cells in a memory device to perform a memory access, the memory device comprising a plurality of sets of memory cells corresponding to respective portions of an array of memory cells of the memory device;
• receiving signaling indicative of a command for a precharge operation on a set of the plurality of sets of memory cells, wherein the signaling comprises one or more bits that indicate whether to disable a flip operation on the set of memory cells;
• and
• performing the precharge operation on the set of memory cells based at least in part on the signaling;
• and
• performing an error correction operation, wherein performance of the error correction operation causes the one or more bits to indicate to disable the flip operation.

An apparatus, comprising:

• a memory controller configured to receive a command associated with a plurality of memory cells in a memory device;
• and
• a processing device coupled to the plurality of memory cells, the processing device to:
• activate a set of memory cells in a memory device to perform a memory access, the memory device comprising a plurality of memory cells of a memory array;
• perform a read operation on the set of memory cells;
• receive a command to perform a precharge operation on the set of memory cells, wherein the command comprises one or more data units that indicate whether to disable a flip operation on the set of memory cells;
• and
• perform the precharge operation on the set of memory cells.

A system, comprising:

• a host;
• a memory device coupled to the host through a sideband channel, the memory device comprising:
• a memory array comprising a plurality of memory cells;
• and
• a memory controller coupled to the memory array, the memory controller to:
• activate a set of memory cells in a memory device to perform a memory access, the memory device comprising a plurality of memory cells of a memory array;
• perform the memory access on the set of memory cells;
• receive a command, via the sideband channel from the host, to perform a precharge operation on the set of memory cells, wherein the command comprises one or more bits that indicates whether to disable a flip operation on the set of memory cells;
• perform the precharge operation on the set of memory cells;
• and
• in response to the one or more bits indicating to not disable the flip operation, determine whether to perform the flip operation based on a randomized selection of the flip operation.