Extreme ultraviolet photolithography method with infiltration for enhanced sensitivity and etch resistance
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorChristine Y Ouyang
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Abstract
The present disclosure provides a method for lithography patterning in accordance with some embodiments. The method includes forming a photoresist layer over a substrate; performing an exposing process to the photoresist layer using an extreme ultraviolet (EUV) radiation; performing an infiltration process to the photoresist layer using a metal-containing chemical; and performing a developing process to the photoresist layer to form a patterned resist layer.
Claims20
A method for lithography patterning, comprising:
- forming a photoresist layer over a substrate;
- thereafter, performing an exposing process to the photoresist layer;
- thereafter, performing a first infiltration process to introduce a first metallic compound to the photoresist layer;
- thereafter, performing a developing process to the photoresist layer to form a patterned photoresist layer;
- and
- thereafter, performing a second infiltration process to the patterned photoresist layer to enhance etch resistance thereof.
A method for lithography patterning, comprising:
- forming a photoresist layer over a substrate;
- thereafter, performing an exposing process to the photoresist layer;
- thereafter, performing an infiltration process to introduce a metallic compound to the photoresist layer;
- and
- thereafter, performing a developing process to the photoresist layer to form a patterned photoresist layer.
A method for lithography patterning, comprising:
- forming a photoresist layer over a substrate;
- thereafter, performing an exposing process to the photoresist layer;
- performing a first infiltration process to introduce a first metallic compound to the photoresist layer, wherein the first infiltration process uses a cyclic process that further includes
- applying an organometallic precursor to the photoresist layer,
- contacting the photoresist layer with nitrogen, and
- contacting the photoresist layer with an oxidant;
- and
- thereafter, performing a developing process to the photoresist layer to form a patterned photoresist layer.
Dependencies are inferred from the claim text.