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US 12,111,569 B2Granted
Method for sizing a gray scale lithography mask
AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorUjwol Palanchoke
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AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorUjwol Palanchoke
Estimating the term…
A method for sizing a greyscale lithography mask is disclosed. The mask includes first opaque zones, being opaque to light-exposing radiation, located in first pixels forming a first mask grating. A first target density of a first surface density of first opaque zones is first established. This first target density makes it possible to expose a resin to light over a first given target thickness when it is exposed to the radiation through the first grating. The dimensions of the first pixels and the dimensions of the first opaque zones are then established, such that the value of an error over the first target thickness is less than a first given threshold. The dimensions obtained for the sizing of the first mask grating are used.
A method for sizing a greyscale lithography mask, the mask mainly extending along a horizontal plane defined by a first direction and a second direction, the plane being perpendicular to a main direction of a light-exposing radiation of a photosensitive resin through the mask, the mask comprising a plurality of opaque zones to the radiation, each opaque zone being located in a zone of the mask called pixel, the plurality of opaque zones comprising first opaque zones being located in first pixels, the first pixels forming a first grating of the mask, the method comprising the following steps:
Dependencies are inferred from the claim text.