Terahertz carrier-envelope phase shifter

A terahertz carrier-envelope phase shifter, comprising:

• a substrate;
• a first phase modulator arranged on a surface of the substrate, wherein the first phase modulator has a first phase modulation angle;
• and
• a second phase modulator arranged on the surface of the substrate, wherein the second phase modulator has a second phase modulation angle that is different from the first phase modulation angle, so that a carrier-envelope phase of a terahertz pulse after the terahertz pulse passes through the first phase modulator and the substrate is different from a carrier-envelope phase of the terahertz pulse after the terahertz pulse passes through the second phase modulator and the substrate;
• the first phase modulator comprises a first dielectric plate, a first transverse metal wire grating, a first longitudinal metal wire grating, and a first resonator, wherein the first transverse metal wire grating and the first longitudinal metal wire grating are arranged on two opposite surfaces of the first dielectric plate, the first resonator is arranged inside the first dielectric plate and is positioned between the first transverse metal wire grating and the first longitudinal metal wire grating, the first resonator has a first symmetry axis, and the first symmetry axis is at a first included angle to a transverse direction.