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US 12,111,270 B2Granted
Method of inspecting a wafer and apparatus for performing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsJuntaek Oh, Jinwoo Ahn, Kijoo Hong, Youngkyu Park, Eunsoo Hwang
Life of this patent
Estimating the term…
Abstract
A method of inspecting a wafer comprising measuring an intensity of an incident light and storing the measurement as stored incident light intensity, irradiating the incident light to the wafer, measuring an intensity of a reflected light from the wafer and storing the measurement as stored reflected light intensity, and correcting the stored reflected light intensity based on a difference between the stored incident light intensity and a reference intensity of a reference incident light.
Claims17
A method of inspecting a wafer, the method comprising:
- generating a reference incident light including a plurality of wavelengths;
- measuring, by wavelength, an intensity of the reference incident light by the wavelengths and storing the measurement as stored reference incident light intensity;
- irradiating the reference incident light to the wafer;
- measuring, by wavelength, an intensity of a reference reflected light by the wavelengths and storing the measurement as stored reference reflected light intensity, the reference reflected light generated as a result of irradiating the reference incident light to the wafer;
- generating an incident light including the plurality of wavelengths;
- measuring, by wavelength, an intensity of the incident light and storing the measurement as stored incident light intensity;
- irradiating the incident light to the wafer;
- measuring, by wavelength, an intensity of a reflected light from the wafer and storing the measurement as stored reflected light intensity, the reflected light generated as a result of irradiating the incident light to the wafer;
- determining a difference, at individual wavelengths, between the stored reflected light intensity and the stored reference reflected light intensity;
- and
- correcting, by wavelength, the stored reflected light intensity based on the determined difference,
- wherein there is a time lapse between when the stored reference reflected light intensity is measured and when the stored reflected light intensity is measured.
9 more elements
A method of inspecting a wafer, the method comprising:
- generating a reference incident light including a plurality of wavelengths;
- measuring, by wavelength, an intensity of the reference incident light by the wavelengths and storing the measurement as stored reference incident light intensity;
- irradiating the reference incident light to the wafer;
- measuring, by wavelength, an intensity of a reference reflected light by the wavelengths and storing the measurement as stored reference reflected light intensity, the reference reflected light generated as a result of irradiating the reference incident light to the wafer;
- generating an incident light including the plurality of wavelengths;
- measuring, by wavelength, an intensity of the incident light and storing the measurement as stored incident light intensity;
- polarizing the incident light;
- irradiating the polarized incident light to the wafer;
- measuring, by wavelength, an intensity of a reflected light from the wafer and storing the measurement as stored reflected light intensity, the reflected light generated as a result of irradiating the polarized incident light to the wafer;
- determining a difference, at individual wavelengths, between the stored reflected light intensity and the stored reference reflected light intensity;
- and
- correcting, by wavelength, the stored reflected light intensity based on the determined difference, at individual wavelengths,
- wherein there is a time lapse between when the stored reference reflected light intensity is measured and when the stored reflected light intensity is measured.
10 more elements
Dependencies are inferred from the claim text.