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US 12,110,589 B2Granted
Methods for metal oxide post-treatment
AssigneeApplied Materials, Inc.
InventorsTatsuya E. Sato, Wei Liu, Li-Qun Xia
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Abstract
Methods comprising forming a metal oxide film by atomic layer deposition using water as an oxidant are described. The metal oxide film is exposed to a decoupled plasma comprising one or more of He, H2 or O2 to lower the wetch etch rate of the metal oxide film.
Claims7
A method comprising:
- forming an aluminum oxide film on a substrate surface by ALD using water as an oxidant;
- and
- exposing the aluminum oxide film to a decoupled plasma consisting essentially of He, to lower the wet etch rate of the aluminum oxide film to less than 50 Å/min,
- wherein the decoupled plasma is a remote directional plasma, the remote directional plasma formed in a plasma assembly having a slot with edges through which the plasma flows, the plasma having a high ion energy and concentration adjacent the edges of the slot.
1 more element
Dependencies are inferred from the claim text.