Deposition apparatus and method with EM radiation

A method comprising:

• placing a substrate over a platform in a chamber of a deposition system;
• flowing a precursor material into the chamber using a showerhead;
• generating a first gas curtain in front of a first electromagnetic (EM) radiation source coupled to the chamber, and a second gas curtain in front of a second EM radiation source coupled to the chamber, wherein the first EM radiation source is separated from the chamber by a window, and wherein the first gas curtain protects the window from the precursor material, wherein generating the first gas curtain is initiated after flowing the precursor material into the chamber;
• generating a third gas curtain in front of a third EM radiation source coupled to the chamber, and a fourth gas curtain in front of a fourth EM radiation source coupled to the chamber, wherein the third EM radiation source is separated from the chamber by a window, wherein generating the third gas curtain is initiated after flowing the precursor material into the chamber, wherein the third EM radiation source and the fourth EM radiation source overlap with an outer perimeter of the substrate in a plan view, and wherein the third EM radiation source is disposed above the showerhead;
• after generating the first gas curtain, generating a plasma from the precursor material in the chamber, wherein the plasma comprises dissociated components of the precursor material;
• subjecting the plasma to a first EM radiation from the first EM radiation source and a second EM radiation from the second EM radiation source, wherein the first EM radiation and the second EM radiation propagate in opposite directions;
• depositing a layer over the substrate, the layer comprising a reaction product of the dissociated components of the precursor material, the layer comprising cluster defects at the outer perimeter of the substrate;
• and
• removing, using a third EM radiation from the third EM radiation source and a fourth EM radiation from the fourth EM radiation source, the cluster defects from the layer at the outer perimeter of the substrate, wherein a spacing between the third EM radiation source and the fourth EM radiation source is in a range between 50 mm and 200 mm.

A method comprising:

• placing a substrate over a platform in a chamber of a deposition system;
• flowing a precursor material into the chamber;
• generating a first gas curtain of a first inert gas in front of a first laser source coupled to the chamber, and a second gas curtain of a second inert gas in front of a second laser source coupled to the chamber, wherein generating the first gas curtain begins after flowing the precursor material into the chamber;
• generating a third gas curtain of a third inert gas in front of a third laser source coupled to the chamber, and a fourth gas curtain of a fourth inert gas in front of a fourth laser source coupled to the chamber, wherein generating the third gas curtain begins after flowing the precursor material into the chamber;
• after generating the first gas curtain and the second gas curtain, generating a plasma from the precursor material in the chamber, wherein the plasma comprises dissociated components of the precursor material;
• subjecting the plasma to a first electromagnetic (EM) radiation from the first laser source, and a second EM radiation from the second laser source, wherein the first EM radiation and the second EM radiation further dissociates the precursor material, wherein the first laser source provides the first EM radiation through a first window, and wherein the first EM radiation and the second EM radiation propagate in opposite directions;
• depositing a layer over the substrate using the further dissociated precursor material, wherein depositing the layer forms cluster defects;
• and
• burning, using a third EM radiation from the third laser source and a fourth EM radiation from the fourth laser source, the cluster defects, wherein the third laser source and the fourth laser source overlap an outer perimeter of the substrate, and wherein a spacing between the third laser source and the fourth laser source is in a range between 50 mm and 200 mm.