Low temperature growth of transition metal chalcogenides
AssigneeApplied Materials, Inc.
InventorsChandan Das, Susmit Singha Roy, Bhaskar Jyoti Bhuyan, John Sudijono, Abhijit Basu Mallick, Mark Saly
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Abstract
Transition metal dichalcogenide films and methods for depositing transition metal dichalcogenide films on a substrate are described. Methods for converting transition metal oxide films to transition metal dichalcogenide films are also described. The substrate is exposed to a precursor and a chalcogenide reactant to form the transition metal dichalcogenide film. The exposures can be sequential or simultaneous.
Claims18
A method of depositing a film, the method comprising:
- forming a transition metal oxide film on a substrate surface, forming the transition metal oxide film comprises forming a transition metal film followed by oxidizing the transition metal film by exposing the transition metal film to a plasma treatment of one or more of O2 or O3 to form the transition metal oxide film;
- and
- converting the transition metal oxide film to a transition metal dichalcogenide film.
A method of depositing a film, the method comprising:
- forming a transition metal dichalcogenide film in a process cycle consisting essentially of sequential exposure of a substrate to a transition metal oxide precursor, a purge gas, a chalcogenide reactant, and purge gas.
A method of depositing a film, the method comprising:
- forming a transition metal oxide film in a transition metal oxide process cycle comprising sequential exposure of a substrate to a transition metal precursor, a purge gas, an oxide reactant comprising a plasma of one or more of O2 or O3, and a purge gas;
- and
- converting the transition metal oxide film to a transition metal dichalcogenide film in a chalcogen process cycle comprising sequential exposure of the transition metal oxide film to a chalcogenide reactant and a purge gas.
Dependencies are inferred from the claim text.