Composition for semiconductor processing and method of fabricating semiconductor device using the same

A composition for semiconductor processing containing:

• abrasive particles surface-modified with a silane composition;
• and at least one additive, and being for application to polishing of a surface of a semiconductor wafer having a through silicon via (TSV),
• wherein the at least one additive includes a phosphoric acid-based compound, an organic acid and an azole-based compound, and
• the total weight of the phosphoric acid-based compound is 0.35 parts by weight to about 2.00 parts by weight based on 100 parts by weight of the total weight of the organic acid and the azole-based compound,
• wherein the abrasive particles comprise silica (SiO2),
• wherein a ratio of RN to RCu (RN/RCu) for the composition for semiconductor processing is greater than about 0.50 to less than or equal to about 2.00,
• wherein the value calculated according to Equation 1 for the composition for semiconductor processing is greater than 11.0 to less than or equal to 110.0:
• (
• R
• Cu
• R
• N
• )
• 2
• ×
• R
• O
• 100
• [
• Equation
• ⁢
• 1
• ]
• wherein RO is the removal rate (Å/min) of a silicon oxide layer during polishing using the composition for semiconductor processing, RN is the removal rate (Å/min) of a silicon nitride layer during polishing using the composition for semiconductor processing, and RCu is the removal rate (Å/min) of a copper layer during polishing using the composition for semiconductor processing;
• and each of the removal rate of the silicon oxide layer, the removal rate of the silicon nitride layer, and the removal rate of the copper layer is a value obtained by performing polishing on a wafer having each of the layers for 60 seconds under conditions of a carrier pressing pressure of 3.0 psi, a carrier rotation speed of 120 rpm and a surface plate rotation speed of 117 rpm while supplying the composition for semiconductor processing at a flow rate of 300 mL/min.