Nickel chromium aluminum thin film resistor
AssigneeTexas Instruments Incorporated
InventorsGernot Manfred Bauer, Kai-Alexander Schachtschneider
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Abstract
An integrated circuit includes a thin film resistor body that is formed over a dielectric layer. An interfacial layer is formed on the thin film resistor body and resistor heads are formed on the interfacial layer. The thin film resistor body includes nickel chromium aluminum (NiCrAl) and the resistor heads include titanium tungsten (TiW).
Claims35
An integrated circuit comprising:
- a thin film resistor body that includes nickel chromium aluminum (NiCrAl) over a dielectric layer, wherein the thin film resistor body has a first thickness;
- an interfacial layer on the thin film resistor body, wherein the interfacial layer has a second thickness less than the first thickness;
- and
- resistor heads on the interfacial layer, the resistor heads including titanium tungsten (TiW).
A method of fabricating an integrated circuit with a thin film resistor comprising:
- forming a thin film layer on a dielectric layer, the thin film layer including nickel chromium aluminum, wherein the thin film layer has a first thickness;
- forming an interfacial layer directly on the thin film layer, wherein the interfacial layer has a second thickness less than the first thickness;
- forming a resistor-head layer on the interfacial layer, the resistor-head layer including titanium tungsten;
- patterning and etching the resistor-head layer to form a resistor hardmask for the thin film layer;
- and
- etching the thin film layer using the resistor hardmask and a wet etch to form a thin film resistor body.
A thin film resistor structure comprising:
- a thin film resistor body including nickel chromium aluminum (NiCrAl) formed over an oxide layer, the thin film resistor body having a first thickness;
- a titanium nitride (TiN) layer formed over the thin film resistor body, the TiN layer having a second thickness less than the first thickness;
- and
- resistor heads including titanium tungsten (TiW) formed on the TiN layer.
A thin film resistor structure, comprising:
- a thin film resistor body including nickel chromium aluminum (NiCrAl) formed over an oxide layer, the thin film resistor body having a thickness less than or equal to about 0.1 μm;
- a titanium nitride (TiN) layer formed directly on the thin film resistor body;
- a titanium (Ti) layer formed directly on the TiN layer;
- and
- resistor heads including titanium tungsten (TiW) formed directly on the Ti layer.
An integrated circuit, comprising:
- a thin film resistor body that includes nickel chromium aluminum (NiCrAl) over a dielectric layer;
- an interfacial layer on the thin film resistor body;
- and
- resistor heads on the interfacial layer, the resistor heads including titanium tungsten (TiW).
A thin film resistor structure, comprising:
- a thin film resistor body including nickel chromium aluminum (NiCrAl) formed over an oxide layer, the thin film resistor body having a thickness less than or equal to about 0.1 um;
- a titanium nitride (TiN) layer formed over the thin film resistor body;
- and
- resistor heads including titanium tungsten (TiW) formed on the TiN layer.
Dependencies are inferred from the claim text.