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US 12,078,654 B2Granted
Rugged, single crystal wide-band-gap-material scanning-tunneling-microscopy/lithography tips
OwnerSteven R. J. Brueck, Daniel Feezell +5inventors
InventorsSteven R. J. Brueck, Daniel Feezell, John Randall, Tito Busani, Joshua B. Ballard, Mahmoud Behzadirad, Ashwin Krishnan Rishinaramangalam
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Abstract
Provided is a composite metal-wide-bandgap semiconductor tip for scanning tunneling microscopy and/or scanning tunneling lithography, a method of forming, and a method for using the composite metal-wide-bandgap semiconductor tip.
Claims12
A method of forming a composite tip for a scanning tunneling microscope (“STM”), comprising:
- using a nanomanipulator to select a single crystal wide-band-gap semiconductor from an array of formed single crystal wide-band-gap semiconductors epitaxially grown selectively on a crystalline substrate, wherein the single crystal wide-band-gap semiconductor comprises a group III-N nanowire;
- preparing an electrically conductive wire to provide a substantially flat end surface that is substantially perpendicular to the wire length direction;
- transferring the single crystal wide-band-gap semiconductor from the growth substrate to the substantially flat end surface of the electrically conductive wire;
- and
- affixing the single crystal wide-band-gap semiconductor to the substantially flat end surface of the electrically conductive wire to form the composite tip.
2 more elements
A method of forming a composite tip for a scanning tunneling microscope (“STM”), comprising:
- using a nanomanipulator to select a single crystal wide-band-gap semiconductor from an array of formed single crystal wide-band-gap semiconductors epitaxially grown selectively on a crystalline substrate, wherein the single crystal wide-band-gap semiconductor comprises a group III-N nanowire;
- preparing an electrically conductive wire to provide a substantially flat end surface that is substantially perpendicular to the wire length direction;
- transferring the single crystal wide-band-gap semiconductor from the growth substrate to the substantially flat end surface of the electrically conductive wire;
- and
- affixing the single crystal wide-band-gap semiconductor to the substantially flat end surface of the electrically conductive wire to form the composite tip,
- wherein the electrically conductive wire comprises a substantially cylindrical body and a distal end tapered to a diameter larger than the single crystal wide-band-gap semiconductor and terminated with a flat surface that is approximately perpendicular to a transverse axis of the electrically conductive wire.
3 more elements
Dependencies are inferred from the claim text.