Plasma processing apparatus and control method
AssigneeTokyo Electron Limited
InventorsTaro Ikeda, Yuki Osada
Life of this patent
Estimating the term…
Loading patent…
AssigneeTokyo Electron Limited
InventorsTaro Ikeda, Yuki Osada
Estimating the term…
A method of controlling plasma includes providing a plasma processing apparatus that includes N microwave introducing radiators disposed in a circumferential direction of a ceiling plate of a processing container so as to introduce microwaves for generating plasma into the processing container, wherein N≥2; and M sensors and configured to monitor at least one of electron density Ne and electron temperature Te of the plasma generated in the processing container, wherein M equals to N or a multiple of N. The method further includes controlling at least one of a power and a phase of the microwaves introduced from the microwave introducing radiators based on at least one of electron density Ne and electron temperature Te of the plasma monitored by the M sensors.
A method of controlling plasma, the method comprising:
A method of controlling plasma, the method comprising:
Dependencies are inferred from the claim text.