Back to results
US 12,016,251 B2Granted
Spin-orbit torque and spin-transfer torque magnetoresistive random-access memory stack
AssigneeInternational Business Machines Corporation
InventorsHeng Wu, Alexander Reznicek, Bahman Hekmatshoartabari, Ruilong Xie
Life of this patent
Estimating the term…
Abstract
Embodiments disclosed herein include a semiconductor structure. The semiconductor structure may include a spin transfer torque (STT) magnetoresistive random access memory (MRAM) stack. The semiconductor structure may also include a spin orbit torque (SOT) MRAM stack vertically in series with the STT-MRAM. The SOT-MRAM stack may include a heavy metal spin hall effect rail configured to flip an SOT free-layer magnetic orientation in response to a horizontal signal through the heavy metal rail.
Claims7
A semiconductor structure, comprising:
- a spin transfer torque (STT) magnetoresistive random access memory (MRAM) stack, comprising:
- an STT reference layer comprising a fixed magnetic field;
- and
- an STT free layer configured to flip an STT magnetic orientation in response to a vertical signal through the STT reference layer and the STT free layer;
- and
- a spin orbit torque (SOT)-MRAM stack vertically in series with the STT-MRAM comprising:
- a heavy metal spin hall effect (SHE) rail configured to flip an SOT free-layer magnetic orientation in response to a horizontal signal through the heavy metal SHE rail;
- an SOT reference layer different from the STT reference layer;
- and
- an SOT free layer configured to flip the SOT free-layer magnetic orientation in response to a vertical signal through the SOT-MRAM.
7 more elements
Dependencies are inferred from the claim text.