MRAM structure and method of fabricating the same

A method of fabricating a magnetic random access memory (MRAM) structure, the method comprising:

• providing a dielectric layer, wherein a first MRAM, a second MRAM and a third MRAM are disposed on the dielectric layer, the second MRAM are disposed between the first MRAM and the third MRAM, two gaps are respectively disposed between the first MRAM and the second MRAM and between the second MRAM and the third MRAM, and the first MRAM, the second MRAM and the third MRAM each comprise a magnetic tunneling junction (MTJ);
• forming a first compressive stress layer covering the first MRAM, the second MRAM, the third MRAM and the dielectric layer, wherein the first compressive stress layer contacts the MTJ of the first MRAM, the MTJ of the second MRAM and the MTJ of the third MRAM;
• forming a tensile stress material layer covering the first compressive stress layer and filling in the two gaps;
• removing the tensile stress material layer outside of the two gaps to form two tensile stress pieces in respective ones of the two gaps, wherein the two tensile stress pieces contact the first compressive stress layer;
• and
• forming a second compressive stress layer covering an opening of each of the two gaps and contacting the two tensile stress pieces, wherein an absolute value of a tensile stress in each of the two tensile stress pieces is the same as an absolute value of a tensile stress in the first compressive stress layer or a difference between the absolute value of the tensile stress in each of the two tensile stress pieces and the absolute value of the tensile stress in the first compressive stress layer is smaller than a predetermined ratio.