Electronic device including a light-emitting element having functional layers with thickness profiles

An electronic device comprising:

• a pixel defining layer in which a plurality of openings spaced apart from each other on a plane are defined;
• and
• a plurality of light-emitting elements comprising at least one functional layer in each of the plurality of openings,
• wherein each of the plurality of light-emitting elements comprises:
• a first electrode, at least a portion of the first electrode being in direct contact with at least a portion of the pixel defining layer;
• a hole transport region on the first electrode and being greater in thickness at a center of the hole transport region than at an outer periphery thereof;
• an emission layer on the hole transport region and being smaller in thickness at a center of the emission layer than at an outer periphery thereof;
• an electron transport region on the emission layer;
• and
• a second electrode on the electron transport region, and
• wherein the center of the hole transport region and the center of the emission layer respectively correspond to a point that passes through a virtual center line normal to the first electrode, and the outer periphery of the hole transport region and the outer periphery of the emission layer respectively correspond to a point spaced apart from the center toward the pixel defining layer.

An electronic device comprising a plurality of light-emitting elements,

• each of the plurality of light-emitting elements comprising:
• a first electrode;
• a hole transport region on the first electrode;
• an emission layer directly on the hole transport region, the emission layer comprising a host and a dopant;
• an electron transport region on the emission layer;
• and
• a second electrode on the electron transport region,
• wherein a first thickness of the hole transport region, which is a distance between the first electrode and the emission layer, decreases from a center of the hole transport region to an outer periphery thereof, and
• a second thickness of the emission layer, which is a distance between the hole transport region and the electron transport region, increases from a center of the emission layer to an outer periphery thereof.