Semiconductor device and method of manufacturing the same

Abstract

In one embodiment, a method of manufacturing a semiconductor device includes forming a stacked film alternately including a plurality of first insulating layers and a plurality of second insulating layers, and forming a hole in the stacked film. The method further includes forming a first film, a first insulator, a charge storage layer, a second insulator and a first semiconductor layer in order in the hole, and forming a plurality of concave portions by removing the plurality of first insulating layers. The method further includes exposing the first insulator from the plurality of concave portions by removing the first film between the plurality of concave portions and the first insulator, and forming a plurality of electrode layers in the plurality of concave portions.

Dependencies are inferred from the claim text.