Three dimensional memory device containing resonant tunneling barrier and high mobility channel and method of making thereof
AssigneeSanDisk Technologies LLC
InventorsPeter Rabkin, Masaaki Higashitani
Life of this patent
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Abstract
A memory device includes an alternating stack of insulating layers and control gate layers, a memory opening vertically extending through the alternating stack, and a memory opening fill structure containing a memory film and a vertical semiconductor channel located within the memory opening. The memory film contains a resonant tunneling barrier stack, a semiconductor barrier layer, and a memory material layer located between the resonant tunneling barrier stack and the semiconductor barrier layer.
Claims14
A memory device, comprising:
- an alternating stack of insulating layers and control gate layers;
- a memory opening vertically extending through the alternating stack;
- and
- a memory opening fill structure comprising a memory film and a vertical semiconductor channel located within the memory opening,
- wherein the memory film comprises a resonant tunneling barrier stack, a semiconductor barrier layer, and a memory material layer located between the resonant tunneling barrier stack and the semiconductor barrier layer;
- wherein the resonant tunneling barrier stack comprises at least two semiconductor quantum wells.
A memory device, comprising:
- an alternating stack of insulating layers and control gate layers;
- a memory opening vertically extending through the alternating stack;
- and
- a memory opening fill structure comprising a memory film and a vertical semiconductor channel located within the memory opening,
- wherein the memory film comprises a resonant tunneling barrier stack, a semiconductor barrier layer, and a memory material layer located between the resonant tunneling barrier stack and the semiconductor barrier layer;
- wherein:
- the semiconductor barrier layer is located between the memory material layer and the vertical semiconductor channel;
- and
- the resonant tunneling barrier stack is located between the memory material layer and the alternating stack.
A memory device, comprising:
- an alternating stack of insulating layers and control gate layers;
- a memory opening vertically extending through the alternating stack;
- and
- a memory opening fill structure comprising a memory film and a vertical semiconductor channel located within the memory opening,
- wherein the memory film comprises a resonant tunneling barrier stack, a semiconductor barrier layer, and a memory material layer located between the resonant tunneling barrier stack and the semiconductor barrier layer;
- wherein:
- the resonant tunneling barrier stack is located between the memory material layer and the vertical semiconductor channel;
- and
- the semiconductor barrier layer is located between the memory material layer and the alternating stack.
A method of operating a memory device comprising an alternating stack of insulating layers and control gate layers, a memory opening vertically extending through the alternating stack, and a memory opening fill structure comprising a memory film and a vertical semiconductor channel located within the memory opening, wherein the memory film comprises a resonant tunneling barrier stack, a semiconductor barrier layer, and a memory material layer located between the resonant tunneling barrier stack and the semiconductor barrier layer;
- the method comprising:
- applying a negative voltage to at least one of the control gate electrodes to program the memory material layer;
- and
- applying a positive voltage to at least one of the control gate electrodes to erase the memory material layer.
Dependencies are inferred from the claim text.